Table of contents for Theory of modern electronic semiconductor devices / Kevin F. Brennan, April S. Brown.


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PREFACE. 
1 OVERVIEW OF SEMICONDUCTOR DEVICE TRENDS. 
1.1 Moore's Law and Its Implications. 
1.2 Semiconductor Devices for Telecommunications. 
1.3 Digital Communications. 
2 SEMICONDUCTOR HETEROSTRUCTURES. 
2.1 Formation of Heterostructures. 
2.2 Modulation Doping. 
2.3 Two-Dimensional Subband Transport at Heterointerfaces. 
2.4 Strain and Stress at Heterointerfaces. 
2.5 Perpendicular Transport in Heterostructures and
Superlattices. 
2.6 Heterojunction Materials Systems: Intrinsic and
Extrinsic Properties. 
Problems.  
3 HETEROSTRUCTURE FIELD-EFFECT TRANSISTORS. 
3.1 Motivation. 
3.2 Basics of Heterostructure Field-Effect Transistors.
3.3 Simplified Long-Channel Model of a MODFET. 
3.4 Physical Features of Advanced State-of-the-Art MODFETs.
3.5 High-Frequency Performance of MODFETs. 
3.6 Materials Properties and Structure Optimization for HFETs. 
Problems. 
4 HETEROSTRUCTURE BIPOLAR TRANSISTORS. 
4.1 Review of Bipolar Junction Transistors. 
4.2 Emitter-Base Heterojunction Bipolar Transistors. 
4.3 Base Transport Dynamics. 
4.4 Nonstationary Transport Effects and Breakdown. 
4.5 High-Frequency Performance of HBTs. 
4.6 Materials Properties and Structure Optimization for HBTs . 
Problems. 
5 TRANSFERRED ELECTRON EFFECTS, NEGATIVE
DIFFERENTIAL RESISTANCE, AND DEVICES. 
5.1 Introduction. 
5.2 k-Space Transfer. 
5.3 Real-Space Transfer.
5.4 Consequences of NDR in a Semiconductor. 
5.5 Transferred Electron-Effect Oscillators: Gunn Diodes.  
5.6 Negative Differential Resistance Transistors. 
5.7 IMPATT Diodes. 
Problems. 
6 RESONANT TUNNELING AND DEVICES. 
6.1 Physics of Resonant Tunneling: Qualitative Approach.
6.2 Physics of Resonant Tunneling: Envelope Approximation.
6.3 Inelastic Phonon Scattering Assisted Tunneling: Hopping
Conduction. 
6.4 Resonant Tunneling Diodes: High-Frequency Applications.
6.5 Resonant Tunneling Diodes: Digital Applications. 
6.6 Resonant Tunneling Transistors. 
Problems. 
7 CMOS: DEVICES AND FUTURE CHALLENGES.  
7.1 Why CMOS? 
7.2 Basics of Long-Channel MOSFET Operation. 
7.3 Short-Channel Effects. 
7.4 Scaling Theory. 
7.5 Processing Limitations to Continued Miniaturization.
Problems. 
8 BEYOND CMOS: FUTURE APPROACHES TO COMPUTING
HARDWARE. 
8.1 Alternative MOS Device Structures: SOI, Dual-Gate FETs,
and SiGe. 
8.2 Quantum-Dot Devices and Cellular Automata. 
8.3 Molecular Computing. 
8.4 Field-Programmable Gate Arrays and Defect-Tolerant
Computing. 
8.5 Coulomb Blockade and Single-Electron Transistors. 
8.6 Quantum Computing. 
Problems. 
9 MAGNETIC FIELD EFFECTS IN SEMICONDUCTORS. 
9.1 Landau Levels. 
9.2 Classical Hall Effect. 
9.3 Integer Quantum Hall Effect. 
9.4 Fractional Quantum Hall Effect. 
9.5 Shubnikov-de Haas Oscillations. 
Problems. 
REFERENCES. 
APPENDIX A: PHYSICAL CONSTANTS. 
APPENDIX B: BULK MATERIAL PARAMETERS. 
Table I: Silicon. 
Table II: Ge. 
Table III: GaAs.
Table IV: InP. 
Table V: InAs. 
Table VI: InN. 
Table VII: GaN. 
Table VIII: SiC. 
Table IX: ZnS.
Table X: ZnSe. 
Tabl e XI : Al x Ga 1 x As. 
Tabl e XI I : Ga 0:47 In 0:53 As. 
Table XIII: Al 0:48 In 0:52 As. 
Tabl e XI V: Ga 0:5 In 0:5 P. 
Tabl e XV: Hg 0:70 Cd 0:30 Te. 
APPENDIX C: HETEROJUNCTION PROPERTIES. 
INDEX.


Library of Congress subject headings for this publication: Semiconductors