Table of contents for Nanoscale transistors : device physics, modeling and simulation / Mark S. Lundstrom, Jing Guo.


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1)    Basic Concepts                                           1
1.1  Introduction                                       I
1.2  Distribution functions                             1
1.3  3D, 2D, and ID Carriers                            3
1.4  Density of states                                  7
1.5  Carrier densities                                  8
1.6  Directed moments                                  10
1.7  Ballistic transport: semiclassical                12
1.8  Ballistic transport: quantum                      16
1.9  The NEGF formalism                                21
1.10 Scattering                                        25
1.11 Conventional transport theory                     26
1.12 Resistance of a ballistic conductor               31
1.13 Coulomb blockade                                  33
1.14 Summary                                           37
2)     Devices, Circuits and Systems                          39
2.1  Introduction                                      39
2.2  The MOSFET                                        40
2.3  ID MOS Electrostatics                             45
2.4  2D MOS Electrostatics                             54
2.5  MOSFET Current-Voltage Characteristics            61
2.6  The bipolar transistor                            67
2.7   CMOS Technology                                  69
2.8  Ultimate limits                                   75
2.9  Summary                                           80
3)     The Ballistic Nanotransistors                          83
3.1  Introduction                                      83
3.2  Physical view of the nanoscale MOSFETs            86
3.3   Natori's theory of the ballistic MOSFET          91
3.4   Nondegenerate, degenerate, and general carrier statistics  94
3.4.1 The ballistic MOSFET (nondegenerate conditions)  94
3.4.2 The ballistic MOSFET (TL = 0, degenerate conditions)  97
3.4.3 The ballistic MOSFET (general conditions)        103
3.5  Beyond the Natori model                           105
3.5.1 Role of the quantum capacitance                  105
3.5.2 Two dimensional electrostatics                   108
3.6  Discussion                                         110
3.7  Summary                                            113
4)     Scattering Theory of the MOSFET                         115
4.1  Introduction                                       115
4.2  MOSFET physics in the presence of scattering       117
4.3  The scattering model                               120
4.4   The transmission coefficient under low drain bias  126
4.5   The transmission coefficient under high drain bias  129
4.6  Discussion                                         134
4.7  Summary                                            136
5)     Nanowire Field-Effect Transistors                       140
5.1  Introduction                                       140
5.2  Silicon nanowire MOSFETs                           140
5.2.1 Evaluation of the I-V characteristics             143
5.2.2 The I-V characteristics for nondegenerate carrier statistics 143
5.2.3 The I-V characteristics for degenerate carrier statistics  145
5.2.4 Numerical results                                 147
5.3   Carbon nanotubes                                  153
5.4   Bandstructure of carbon nanotubes                 155
5.4.1 Bandstructure of graphene                         155
5.4.2 Physical structure of nanotubes                   158
5.4.3 Bandstructure of nanotubes                        160
5.4.4 Bandstructure near the Fermi points               165
5.5   Carbon nanotube FETs                              169
5.6   Carbon nanotube MOSFETs                           171
5.7  Schottky barrier carbon nanotube FETs              173
5.8  Discussion                                         176
5.9  Summary                                            179
6)     Transistors at the Molecular Scale                      182
6.1  Introduction                                       182
6.2   Electronic conduction in molecules                183
6.3  General model for ballistic nanotransistors        187
6.4  MOSFETs with OD, ID, and 2D channels               193
6.5  Molecular transistors?                             196
6.6  Single electron charging                           199
6.7  Single electron transistors                        203
6.8  Summary                                            209



Library of Congress subject headings for this publication: Nanotechnology, Metal oxide semiconductor field-effect transistors Mathematical models, Nanostructured materials Mathematical models