Table of contents for Fundamentals of modern VLSI devices / Yuan Taur, Tak H. Ning.


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Physical constants and unit conversions; List of symbols; Preface to the second edition; Preface to the first edition; 1. Introduction; 2. Basic device physics; 3. MOSFET devices; 4. CMOS device design; 5. CMOS performance factors; 6. Bipolar devices; 7. Bipolar device design; 8. Bipolar performance factors; 9. Memory devices; 10. Silicon-on-insulator devices; Appendices: 1. CMOS process flow; 2. Outline of a process for fabricating modern n-p-n bipolar transistors; 3. Einstein relations; 4. Spatial variation of quasi-Fermi potentials; 5. Generation and recombination processes and space-charge-region current; 6. Diffusion capacitance of a p-n diode; 7. Image-force-induced barrier lowering; 8. Electron-initiated and hole-initiated avalanche breakdown; 9. An analytical solution for the short-channel effect in subthreshold; 10. Generalized MOSFET scale length model; 11. Drain current model of a ballistic MOSFET; 12. Quantum-mechanical solution in weak inversion; 13. Power gain of a two-port network; 14. Unity-gain frequencies of a MOSFET transistor; 15. Determination of emitter and base series resistances; 16. Intrinsic-base resistance; 17. Energy-band diagram of a Si-SiGe n-p diode; 18. fr and fmax of a bipolar transistor; References; Index.


Library of Congress subject headings for this publication:
Metal oxide semiconductors, Complementary.
Bipolar transistors.
Integrated circuits -- Very large scale integration.