Table of contents for Fundamentals of modern VLSI devices / Yuan Taur, Tak H. Ning.
Bibliographic record and links to related information available from the Library of Congress catalog
Information from electronic data provided by the publisher. May be incomplete or contain other coding.
Physical constants and unit conversions; List of symbols; Preface to the second edition; Preface to the first edition; 1. Introduction; 2. Basic device physics; 3. MOSFET devices; 4. CMOS device design; 5. CMOS performance factors; 6. Bipolar devices; 7. Bipolar device design; 8. Bipolar performance factors; 9. Memory devices; 10. Silicon-on-insulator devices; Appendices: 1. CMOS process flow; 2. Outline of a process for fabricating modern n-p-n bipolar transistors; 3. Einstein relations; 4. Spatial variation of quasi-Fermi potentials; 5. Generation and recombination processes and space-charge-region current; 6. Diffusion capacitance of a p-n diode; 7. Image-force-induced barrier lowering; 8. Electron-initiated and hole-initiated avalanche breakdown; 9. An analytical solution for the short-channel effect in subthreshold; 10. Generalized MOSFET scale length model; 11. Drain current model of a ballistic MOSFET; 12. Quantum-mechanical solution in weak inversion; 13. Power gain of a two-port network; 14. Unity-gain frequencies of a MOSFET transistor; 15. Determination of emitter and base series resistances; 16. Intrinsic-base resistance; 17. Energy-band diagram of a Si-SiGe n-p diode; 18. fr and fmax of a bipolar transistor; References; Index.
Library of Congress subject headings for this publication:
Metal oxide semiconductors, Complementary.
Integrated circuits -- Very large scale integration.