Publisher description for Fundamentals of modern VLSI devices / Yuan Taur, Tak H. Ning.


Bibliographic record and links to related information available from the Library of Congress catalog


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Learn the basic properties and designs of modern VLSI devices, as well as the factors affecting performance, with this thoroughly updated second edition. The first edition has been widely adopted as a standard textbook in microelectronics in many major US universities and worldwide. The internationally-renowned authors highlight the intricate interdependencies and subtle tradeoffs between various practically important device parameters, and also provide an in-depth discussion of device scaling and scaling limits of CMOS and bipolar devices. Equations and parameters provided are checked continuously against the reality of silicon data, making the book equally useful in practical transistor design and in the classroom. Every chapter has been updated to include the latest developments, such as MOSFET scale length theory, high-field transport model, and SiGe-base bipolar devices.


Library of Congress subject headings for this publication:
Metal oxide semiconductors, Complementary.
Bipolar transistors.
Integrated circuits -- Very large scale integration.