Publisher description for Nanoscale phenomena in ferroelectric thin films / edited by Seungbum Hong.
Bibliographic record and links to related information available from the Library of Congress catalog
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Nanoscale Phenomena in Ferroelectric Thin Films presents the recent advances in the field of nanoscale science and engineering of ferroelectric thin films. It consists of two main parts: electrical characterization in nanoscale ferroelectric capacitor, and nano domain manipulation and visualization in ferroelectric materials. Well-known leading experts both in relevant academia and industry over the world (U.S., Japan, Germany, Switzerland, Korea) were invited to contribute to each chapter. The objectives of the book are to provide the reader with the information needed to 1.) build, see and manipulate domain structures; 2.) understand the unexplained macroscopic phenomena; and 3.) create ferroelectric thin film that shows novel and significantly improved physical, chemical properties and phenomena due to their nanoscale size. This forms the basis on which the existing technology can further improve its performance and/or a new and radical technology can evolve. Nanoscale ferroelectric materials, regardless of their dimensions (film, wire, island), are receiving great interests from academia and industry due to their various potential applications such as memory and storage devices (Ferroelectric Random Access Memory (FRAM), Probe-based Data Storage (PDS) System, etc), sensors (gas sensor, infrared detector, etc), and actuators (micro-mirrors, ultrasonic devices, etc). This book provides the compass to navigate the unknown sea of information related to the nanoscale phenomena occurring in ferroelectric thin films. The intended audience includes professional researchers and engineers in physics, electronics, chemistry, and materials science who are interested either in nanotechnology or ferroelectrics.
Library of Congress subject headings for this publication:
Ferroelectric thin films.