Contributor biographical information for Nanoscale transistors : device physics, modeling and simulation / Mark S. Lundstrom, Jing Guo.
Bibliographic record and links to related information available from the Library of Congress catalog
Biographical text provided by the publisher (may be incomplete or contain other coding). The Library of Congress makes no claims as to the accuracy of the information provided, and will not maintain or otherwise edit/update the information supplied by the publisher.
d104>Mark S. Lundstrom is the Scifres Distinguished Professor of Electrical and Computer Engineering at Purdue University where he also directs the NSF Network for Computational Nanotechnology. His current research interests center on the physics of semiconductor devices, especially nanoscale transistors. His previous work includes studies of heterostructure devices, solar cells, heterojunction bipolar transistors and semiconductor lasers. During the course of his Purdue career, Lundstrom has served as director of the Optoelectronics Research Center and assistant dean of the Schools of Engineering. He is a fellow of both the Institute of Electrical and Electronic Engineers (IEEE) and the American Physical Society and the recipient of several awards for teaching and research — most recently the 2002 IEEE Cledo Brunetti Award and the 2002 Semiconductor Research Corporation Technical Achievement Award for his work with his colleague, S. Datta, on nanoscale electronics.
Jing Guo is an assistant professor of Electrical and Computer Engineering at University of Florida, Gainesville. His has worked on the theory, modeling and simulation of a variety of nanotransistors, including silicon nanotransistors, carbon nanotube transistors, and single electron transistors, in close collaboration with experimentalists. His current research interests focus on modeling and simulation of nanoscale devices, carbon nanotube electronics and optoelectronics, quantum transport, physics of nanoscale transistors, and parallel computation.
Library of Congress subject headings for this publication:
Metal oxide semiconductor field-effect transistors -- Mathematical models.
Nanostructured materials -- Mathematical models.