Publisher description for VLSI fabrication principles : silicon and gallium arsenide / Sorab K. Ghandhi.


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Counter Fully updated with the latest technologies, this edition covers the fundamental principles underlying fabrication processes for semiconductor devices along with integrated circuits made from silicon and gallium arsenide. Stresses fabrication criteria for such circuits as CMOS, bipolar, MOS, FET, etc. These diverse technologies are introduced separately and then consolidated into complete circuits.

Library of Congress subject headings for this publication: Integrated circuits Very large scale integration, Silicon, Gallium arsenide